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2SC5387 Transistor Datasheet PDFSilicon NPN Power Transistor Silicon NPN Power Transistor |
| Part Number | 2SC5387 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5387 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display, color TV. ·High speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- C. |
| Manufacture | Inchange |
| Datasheet |
| Part Number | 2SC5387 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5387 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display, color TV. ·High speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- C. |
| Manufacture | Inchange |
| Datasheet |
| Part Number | 2SC5387 |
|---|---|
| Description | NPN TRANSISTOR |
| Feature | 2SC5387
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5387
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS
z High Voltage z Low Saturation Voltage z High Speed : VCBO = 1500 V : VCE (sat) = 3 V (Max. ) : tf = 0. 15 μs (Typ. ) Unit: mm z Collector Metal (Fin) is Fully Covered with Mold Resin. ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYM. |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
| Part Number | 2SC5387 |
|---|---|
| Description | NPN TRANSISTOR |
| Feature | 2SC5387
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5387
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS
z High Voltage z Low Saturation Voltage z High Speed : VCBO = 1500 V : VCE (sat) = 3 V (Max. ) : tf = 0. 15 μs (Typ. ) Unit: mm z Collector Metal (Fin) is Fully Covered with Mold Resin. ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYM. |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
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