2SC5463

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5463 DESCRIPTION ·Low Noise Figure NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GHz ·High Gain ︱S21e︱2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF~ UHF band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 60 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5463 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 15mA ; VCE= 8V fT Current-Gain—Bandwidth Product IC= 15mA ; VCE= 8V COB Output Capacitance IE= 0 ; VCB= 8V; f= 1MHz Cre Reverse Transfer Capacitance IE= 0 ; VCB= 8V; f= 1MHz ︱S21e︱2 Insertion Power Gain IC= 15mA ; VCE= 8V; f= 500MHz ︱S21e︱2 Insertion Power Gain IC= 15mA ; VCE= 8V; f= 1GHz NF Noise Figure IC= 5mA ; VCE= 8V; f= 500MHz NF Noise Figure IC= 5mA ; VCE= 8V; f= 1GHz MIN TYP. MAX UNIT 1 μA ...