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2SC5470 Datasheet

Part Number 2SC5470
Manufacturers Hitachi
Logo Hitachi
Description Silicon NPN Triple Diffused Planar Transistor
Datasheet 2SC5470 Datasheet2SC5470 Datasheet (PDF)

2SC5470 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output ADE-208-672 (Z) 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz Outline TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter 2SC5470 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction tem.

  2SC5470   2SC5470






Part Number 2SC5478
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5470 Datasheet2SC5478 Datasheet (PDF)

Power Transistors 2SC5478 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1700 1700 600 5 25 14 7.5 60 3.0 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Paramet.

  2SC5470   2SC5470







Part Number 2SC5476
Manufacturers Sanyo Electric
Logo Sanyo Electric
Description NPN Epitaxial Planar Silicon Darlington Transistor
Datasheet 2SC5470 Datasheet2SC5476 Datasheet (PDF)

Ordering number:EN6069 NPN Epitaxial Planar Silicon Darlington Transistor 2SC5476 85V/3A Driver Applications Applications · Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). Features · High DC current gain. · Large current capacity and wide ASO. · Contains a Zener diode of 95±10V between collector and base. · Uniformity in collector-to-base voltage due to adoption of accurate impurity diffusion process. · High inductive load handling capability. Sp.

  2SC5470   2SC5470







Part Number 2SC5474
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5470 Datasheet2SC5474 Datasheet (PDF)

Transistor 2SC5474 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6±0.15 s Features q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 q High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0..

  2SC5470   2SC5470







Part Number 2SC5473
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5470 Datasheet2SC5473 Datasheet (PDF)

Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1± 0.1 s Features q q q 0.425 1.25± 0.10 0.425 q High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0± 0.1 1.3± 0.1 0.65 0.65 0.7± 0.1 .

  2SC5470   2SC5470







Part Number 2SC5472
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5470 Datasheet2SC5472 Datasheet (PDF)

Transistors 2SC5472 Silicon NPN epitaxial planer type Unit: mm (0.425) For low-voltage low-noise high-frequency oscillation I Features • High transition frequency fT • High gain of 8.2 dB and low noise of 1.8 dB at 3 V • Optimum for RF amplification of a portable telephone and pager • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5° 1 2 0.2±0.1 0 to 0.1 .

  2SC5470   2SC5470







Silicon NPN Triple Diffused Planar Transistor

2SC5470 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output ADE-208-672 (Z) 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz Outline TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter 2SC5470 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25° C Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg Note1 Ratings 1500 700 6 20 40 150 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Symbol V(BR)CEO Min 700 6 — 10 3.5 — — — — Typ — — — — — — — 0.2 0.15 Max — — 500 40 6.5 5 1.5 0.4 — V V µs µs Unit V V µA Test Conditions I C = 10mA, RBE = • I E = 10mA, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 10A I C = 12A, IB = 4A I C = 12A, IB = 4A I CP = 8A, IB1= 3A f H = 31.5kHz I CP = 8A, IB1= 2A f H = 64kHz Emitter to base breakdown voltage V(BR)EBO Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage I CES hFE1 hFE2 VCE(sat) Base to emitter saturation voltage VBE(sat) Fall time Fall time tf tf 2 2SC5470 Main Characteristics Collector Power Dissipation vs. Temperature Pc (W) 200 I C (A) 50 20 10 5 2 1 0.5 0.2 0 50 100 Case Temper.


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