2SC5480

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5480 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC(peak) Collector Current-Peak 14 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 28 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5480 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2.5A ICES Collector Cutoff Current VCE= 1500V; RBE= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V 5 hFE-2 DC Current Gain IC= 10A; VCE= 5V 4 tf Fall Time ICP= 7A, IB1= 2.4A; fH= 31.5kHz V 5.0 V 1.5 V 500 μA 25 7 0.4 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inform...