2SC5511

2SC5511 Transistors www.datasheet4u.com For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A) 2SC5511 zExternal dimensions (Unit : mm) TO-220FN 10.0 zStructure NPN Silicon Epitaxial Planar Transistor 4.5 φ3.2 2.8 zFeatures 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO=160V(Min.), at IC=1mA) 3) High fT. (Typ. 150MHz, at VCE=10V, IE= −0.2A, f=100MHz) 4) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 14.0 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Power amplifier Velosity modulation zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 160 160 5 1.5 3 2 20 150 −55 to +150 Unit V V V A A ∗1 zComplements PNP 2SA2005 NPN 2SC5511 zPackaging specifications and hFE Package Type hFE 2SC5511 E Code Basic ordering unit (pieces) Taping − 500 hFE values are classified as follows: Item hFE E 100 to 200 Collector power dissipation Junction temperature Storage temperature ∗1 t=100ms W(Ta=25°C) W(Tc=25°C) °C °C zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVC...