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2SC5556 Datasheet

Part Number 2SC5556
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC5556 Datasheet2SC5556 Datasheet (PDF)

Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm ■ Features • Low noise figure NF 0.40+–00..0150 3 0.16+–00..0160 1.50–+00..0255 2.8–+00..32 • High transition frequency fT 0.4±0.2 • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 2 packing (0.95) (0.95) 5˚ (0.65) 1.9±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.90+–00..0250 10˚ Parameter Symbol Rati.

  2SC5556   2SC5556






Part Number 2SC5557
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet 2SC5556 Datasheet2SC5557 Datasheet (PDF)

Transistor 2SC5557 Silicon NPN epitaxial planar type For low-noise RF amplifier 0.33+–00..0025 Unit: mm 0.10+–00..0025 3 0.15 min. 0.80±0.05 1.20±0.05 I Features • High transition frequency fT 5˚ • High gain of 8.2 dB and low noise of 1.8 dB at 3 V 0.23+–00..0025 12 0.15 min. • Optimum for RF amplification of a portable telephone and pager (0.40) (0.40) 0.80±0.05 1.20±0.05 I Absolute Maximum Ratings Ta = 25°C 5˚ Parameter Symbol Rating Unit / Collector to base voltage VCB.

  2SC5556   2SC5556







Part Number 2SC5555
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5556 Datasheet2SC5555 Datasheet (PDF)

2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-693 (Z) 1st. Edition Nov. 1998 Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “ZD-”. 2SC5555 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature S.

  2SC5556   2SC5556







Part Number 2SC5554
Manufacturers GME
Logo GME
Description Silicon Epitaxial Planar Transistor
Datasheet 2SC5556 Datasheet2SC5554 Datasheet (PDF)

Silicon Epitaxial Planar Transistor FEATURES z Capable low voltage operation APPLICATIONS Pb Lead-free z Designed for low noise amplifier at VHF UHF and CATV band Production specification 2SC5554 ORDERING INFORMATION Type No. Marking 2SC5554 YH SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 15 VCEO Collector-Emitter Voltage 9 VEBO Emitter-Base Voltage 1.5 IC Collector Current -Continuous .

  2SC5556   2SC5556







Part Number 2SC5554
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5556 Datasheet2SC5554 Datasheet (PDF)

2SC5554 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-692 (Z) 1st. Edition Oct. 1998 Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “YH-”. 2SC5554 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature S.

  2SC5556   2SC5556







Silicon NPN Transistor

Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm ■ Features • Low noise figure NF 0.40+–00..0150 3 0.16+–00..0160 1.50–+00..0255 2.8–+00..32 • High transition frequency fT 0.4±0.2 • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 2 packing (0.95) (0.95) 5˚ (0.65) 1.9±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.90+–00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 V c e. d ty Collector-emitter voltage (Base open) VCEO 10 V n d stag tinue Emitter-base voltage (Collector open) VEBO 2 0 to 0.1 1.1–+00..12 1.1–+00..13 V a e cle con Collector current IC 80 mA lifecy , dis Collector power dissipation * PC 300 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C four ntinu Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.0 mm in thickness Marking Symbol: 3K 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package ain onincludestyfpoell,opwliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C c tinued ance Parameter Symbol Conditions Min Typ Max Unit M is con inten Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 V /Dis , ma Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 10 V D ance type Collector-base cutoff current (Emitter open) ICBO VCB = 10.


2008-01-10 : U2606B    U2607B    U2608B    3DD2498    S7540    BQ8211    9-1437063-7    9-143xxxx-x    U2605B    2SC5556   


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