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2SC5622 Datasheet

Part Number 2SC5622
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN Transistor
Datasheet 2SC5622 Datasheet2SC5622 Datasheet (PDF)

Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) (23.4) 22.0±0.5 26.5±0.5 (2.0) (1.2) (10.0) I Features • High breakdown voltage: 1 500 V • High-speed switching • Wide area of safe operation (ASO) I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector to base voltage VCBO 1 500 V 18.6±0.5 (2.0) Solder Dip 5.45±.

  2SC5622   2SC5622






Part Number 2SC5622
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC5622 Datasheet2SC5622 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5622 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO .

  2SC5622   2SC5622







NPN Transistor

Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) (23.4) 22.0±0.5 26.5±0.5 (2.0) (1.2) (10.0) I Features • High breakdown voltage: 1 500 V • High-speed switching • Wide area of safe operation (ASO) I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector to base voltage VCBO 1 500 V 18.6±0.5 (2.0) Solder Dip 5.45±0.3 10.9±0.5 5.5±0.3 3.3±0.3 (2.0) MaDinistecnoanntincueed ICEPCBCdJSCEFCBTuioetrmmooaoaooEsonaarlssllllslrwiinclkllleeleittaeeeeetspttcagcictcceeccitaoocrtttoorrtetuidtoooonotrlirettrrtlrorroornctmeetioencteupccmcobbnfuimureotrPtaaatortpmeterwoesspearrleqmeenfrieeerructfCtntarairvvsueetactttamtoornrhrutuetrallucsurrrettaenaeyrTTaarrnvttesearggueCatfonateereri=lta=ocrttani2rt2ogae5v5net°rio°voCiClsotalttgiac(egpselaVVnTTIPTIIEeCCsCBCMBCdEtjPgSOSVVam=VyIhiCBCnmafFEEEB2TtEBi((enbOss5Oaanto−tte°))al5nCn5ac1n1e±t415oc76335/VVIIIVV20D0e30ECC+0iCCCC°ts=1==BByEEcC5p5o=44===0e0nAA,11150ti0m,,05nVmII00uVaBB,00Aei,In==dC,VV°°IWtVAAAVCeCCCIi00=,,nCno..=IIc88a4=EEnln0uAAdA==0c.d1iete00iAostyn,fposfell=,opw0lIM.ian5nngatMeefrdorkHnudiznraisgP5lc˚rCoBSon1doytiunMnmc5un2tibneelidofcel3ttc:yioypCcTenl53yedp6,sd2taiE2sgceoMT.1n59175O.at05ixPn-u3123eE:::dCEBPCmoatMaUylsmµcilepVVVteknHtAAceeaitrgzt)oer Diode forward voltage VF IF = 4 A −2 V Storage time tstg IC = 4 A, Resistance loaded 5.0 .


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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