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2SC563 Datasheet

Part Number 2SC563
Manufacturers ETC
Logo ETC
Description Si NPN Transistor
Datasheet 2SC563 Datasheet2SC563 Datasheet (PDF)

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  2SC563   2SC563






Part Number 2SC5699
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SC563 Datasheet2SC5699 Datasheet (PDF)

Ordering number : ENN6665A 2SC5699 NPN Triple Diffused Planar Silicon Transistor 2SC5699 CRT Display Horizontal Deflection Output Applications Features High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process. •t 4 Adoption • • Package Dimensions unit : mm 2174A [2SC5699] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.1 Specifications Absolute Maximum Ratings at Ta=25°C Par.

  2SC563   2SC563







Part Number 2SC5698
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SC563 Datasheet2SC5698 Datasheet (PDF)

Ordering number : ENN6664A 2SC5698 NPN Triple Diffused Planar Silicon Transistor 2SC5698 CRT Display Horizontal Deflection Output Applications Features High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process. •t 4 Adoption • On-chip damper diode. • • Package Dimensions unit : mm 2174A [2SC5698] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.1 Specifications Absolute Maximu.

  2SC563   2SC563







Part Number 2SC5696
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC563 Datasheet2SC5696 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5696 DESCRIPTION ·High speed switching ·Built-in damper diode type ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for display horizontal deflection output Switching regulator and general purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter.

  2SC563   2SC563







Part Number 2SC5696
Manufacturers Sanyo
Logo Sanyo
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SC563 Datasheet2SC5696 Datasheet (PDF)

Ordering number : ENN6663C 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2174A [2SC5696] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 21.0 4.0 2.8 2.0 20.4 0.7 1 2 5.45 3.5 3 0.9 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Specifications Absolut.

  2SC563   2SC563







Part Number 2SC5695
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC563 Datasheet2SC5695 Datasheet (PDF)

2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Color TV · · · High voltage: VCBO = 1500 V Low saturation voltage: VCE (sat) = 3 V (max) High speed: tf (2) = 0.1 µs (typ.) Unit: mm www.DataSheet4U.com Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature.

  2SC563   2SC563







Si NPN Transistor

www.DataSheet4U.com .


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