2SC5658M3T5G

www.DataSheet4U.com 2SC5658M3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. Reduces Board Space High hFE, 210 −460 (typical) Low VCE(sat), < 0.5 V ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V Available in 8 mm, 7-inch/3000 Unit Tape and Reel This is a Pb−Free Device http://onsemi.com NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 50 50 5.0 100 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Rating Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 260 150 −55 ~ + 150 Unit mW °C °C 1 2 3 MARKING DIAGRAM SOT−723 CASE 631AA XX M 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. XX = Specific Device Code M = Date Code ORDERING INFORMATION Device 2SC5658M3T5G Package SOT−723 Shipping† 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC...