2SC5695

2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Color TV · · · High voltage: VCBO = 1500 V Low saturation voltage: VCE (sat) = 3 V (max) High speed: tf (2) = 0.1 µs (typ.) Unit: mm www.DataSheet4U.com Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 1500 700 5 22 44 11 200 150 -55~150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2A Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V(BR) CEO hFE (1) DC current gain hFE (2) hFE (3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Storage time Switching time Fall time Storage time Fall time VCE (sat) VBE (sat) fT Cob tstg (1) tf (1) tstg (2) tf (2) Test Condition VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 10 A VCE = 5 V, IC = 17 A IC = 17 A, IB = 4.25 A IC = 17 A, IB = 4.25 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 8 A, IB1 (end) = 1.4 A, fH = 64 kHz ICP = 8 A, IB1 (end) = 1.1 A, fH = 100 kHz Weight: 9.75 g (typ.) Min ¾ ¾ 700 20 8 4.8 ¾ ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ ¾...