2SC5706
NPN Silicon Elektronische Bauelemente
RoHS Compliant Product
D
General Purpose Transistor
TO-252
6. 50Ć0. 15 ...
2SC5706
NPN Silicon Elektronische Bauelemente
RoHS Compliant Product
D
General Purpose Transistor
TO-252
6. 50Ć0. 15 5. 30Ć0. 10 2. 30Ć0. 10 0. 51Ć0. 05
FEATURES
9. 70Ć0. 20
0. 75Ć0. 10
¡ELarge current capacitance ¡ELow collector-to-emitter saturation
voltage ¡EHigh-speed switching ¡EHigh allowable power dissipation
MARKING : 5706 (With Date Code)
C
5
0. 51Ć0. 10 1. 20 0Ć0. 10 5 0. 80Ć0. 10 5
1. 60Ć0. 15
0. 6
0 Ć9 0. 51
2. 30Ć0. 10
0. 60Ć 0. 10
MAXIMUM RATINGS* TA=25ćunless otherwise noted
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Collector Current (Pulse) Base Current Junction Temperature Storage Temperature Total Power Dissipation Symbol VCBO VCES VCEO VEBO I CBO I CP IB Tj TSTG PD PD(TC=25°C)
O
B
Ratings 80 80 50 6 5 7.5 1.2 +150 -55~+150 0.8 15
C
E
2. 30Ć0. 10
Unit V V V V A A A °C °C W W
ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified)
Parameter Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation
Voltage 1 Collector Saturation
Voltage 2 Base Saturation
Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Turn-On Time Storage Time Fall Time
http://www.SeCoSGmbH.com
Symbol BVCBO BVCES BVCEO BVEBO I CBO I EBO *VCE(sat)1 *VCE(sat)2 *V BE(sat) *hFE fT Cob ton tstg tf
Min 80 80 50 6 2...
