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2SC5751 Datasheet

Part Number 2SC5751
Manufacturers Renesas
Logo Renesas
Description NPN SILICON RF TRANSISTOR
Datasheet 2SC5751 Datasheet2SC5751 Datasheet (PDF)

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number 2SC5751 2SC5751-T2 Quantity 50 pcs (Non r.

  2SC5751   2SC5751






Part Number 2SC5759
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Epitaxial Type Transistor
Datasheet 2SC5751 Datasheet2SC5759 Datasheet (PDF)

www.DataSheet4U.com 2SC5759 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1389 (Z) Preliminary 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 10.6 GHz typ. • High power gain and low noise figure ; PG = 11.5B typ. , NF = 1.1 dB typ. at f = 900 MHz • Very low distortion Output IP3 (800 MHz) = 36 dBm typ. Outline CMPAK-4 2 3 1 4 1. Collector 2. Collector 3. Base 4. Emitter Note: Marking is “WN-”. This data sheet contains tentative specification for new produ.

  2SC5751   2SC5751







Part Number 2SC5758
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Epitaxial Type Transistor
Datasheet 2SC5751 Datasheet2SC5758 Datasheet (PDF)

www.DataSheet4U.com 2SC5758 Silicon NPN Epitaxial VHF / UHF Wide band amplifier ADE-208-1397D(Z) Rev.4 Jul. 2001 Features • Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “WF–“. 2SC5758 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC .

  2SC5751   2SC5751







Part Number 2SC5757
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Epitaxial Type Transistor
Datasheet 2SC5751 Datasheet2SC5757 Datasheet (PDF)

www.DataSheet4U.com 2SC5757 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1396D (Z) Rev.4 Jul. 2001 Features • Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “WE–“. 2SC5757 Absolute Maximum Ratings (Ta = 25 °C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC .

  2SC5751   2SC5751







Part Number 2SC5755
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Epitaxial Type Transistor
Datasheet 2SC5751 Datasheet2SC5755 Datasheet (PDF)

www.DataSheet4U.com 2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications · · · High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector po.

  2SC5751   2SC5751







Part Number 2SC5754
Manufacturers CEL
Logo CEL
Description NPN SILICON RF TRANSISTOR
Datasheet 2SC5751 Datasheet2SC5754 Datasheet (PDF)

PHASE-OUT DATA SHEET NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: ηC = 60% • UHS0-HV technology (fT = 25 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin .

  2SC5751   2SC5751







NPN SILICON RF TRANSISTOR

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number 2SC5751 2SC5751-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC P Note tot Tj Tstg Ratings 9.0 6.0 2.0 50 205 150 −65 to +150 Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Unit V V V mA mW °C °C Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional informati.


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