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2SC5757

Hitachi Semiconductor

Silicon NPN Epitaxial Type Transistor

www.DataSheet4U.com 2SC5757 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1396D (Z) Rev.4 Jul. 2001 Featur...


Hitachi Semiconductor

2SC5757

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www.DataSheet4U.com 2SC5757 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1396D (Z) Rev.4 Jul. 2001 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “WE–“. 2SC5757 Absolute Maximum Ratings (Ta = 25 °C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 10 3.5 1.5 80 80 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 10    80 0.9 4.5 8  Typ     100 1.2 6.5 11 1.1 Max  600 200 100 130 1.5   2.0 Unit V nA nA nA  pF GHz dB dB Test conditions IC = 10 µA, IE = 0 VCB = 10 V, IE = 0 VCE = 3.5 V, RBE = Infinite VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz Rev.4, Jul. 2001, page 2 of 10 2SC5757 Collector Power Dissipation Curve 100 Pc (mW) IC (mA) Typical Output Characteristics 50 500 µA µA 450 400 µA 350 µA 80 60 40 300 µA µA 250 Collector Power Dissipation 30 Collector Current 200 µ A 40 20 ...




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