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2SC5765 Datasheet

Part Number 2SC5765
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC5765 Datasheet2SC5765 Datasheet (PDF)

2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS Unit: mm · Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Junction temperature Storage temperature range DC Pulsed Symbol VCBO VCEO VEBO IC ICP PC (Note1) Tj Tstg Rating 15 10 .

  2SC5765   2SC5765






Part Number 2SC5765
Manufacturers UTC
Logo UTC
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet 2SC5765 Datasheet2SC5765 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH  DESCRIPTION medium power amplifier applications strobo flash applications  FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5765L-T9S-K 2SC5765G-T9S-K TO-92SP Note: Pin Assignment: E: Emitter C: Collector B: Base Pin Assignment 1 2 3 E C B Packing Bulk  MARKI.

  2SC5765   2SC5765







Silicon NPN Transistor

2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS Unit: mm · Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Junction temperature Storage temperature range DC Pulsed Symbol VCBO VCEO VEBO IC ICP PC (Note1) Tj Tstg Rating 15 10 7 5 9 550 150 -55 to 150 Unit V V V A mW °C °C JEDEC JEITA TOSHIBA Weight: 0.13 g ― ― 2-4E1A www.DataSheet4U.com Note 1: When a device is mounted on a glass epoxy board (35 mm ´ 30 mm ´ 1mm) Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-Emitter breakdown voltage Symbol ICBO IEBO V(BR)CEO Test Condition VCB = 15 V, IE = 0 VEB = 5 V, IC = 0 IC = 1 mA, IB = 0 Min. ¾ ¾ 10 450 320 170 ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ ¾ ¾ 25 Max. 0.1 0.1 ¾ 700 ¾ ¾ 0.27 ¾ V pF Unit mA mA V hFE(1) (Note2) VCE = 1.5 V, IC = 0.5 A DC current gain hFE(2) (Note2) VCE = 1.5 V, IC = 2 A hFE(3) (Note2) VCE = 1.5 V, IC = 5 A Collector-Emitter saturation voltage Collector-Output Capacitance VCE (sat) (Note2) Cob IC = 3 A, IB = 60 mA VCB = 10 V, IE = 0, f = 1 MHz Note 2: Pulse test 1 2002-01-16 2SC5765 IC – VCE 5 60 4 30 20 Common-Emitter Ta = 25°C 10 3 8 6 2 4 2 1 1 0 0 IB = 0 mA 0.5 1.0 1.5 2.0 0.001 0.01 1 Common-Emitter IC/IB = 50 VCE (sat) – IC Colle.


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