2SC5809

Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching ■ Features High-speed switching (Fall time tf is short) High collector-base voltage (Emitter open) VCBO Low collector-emitter saturation voltage VCE(sat) TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 800 500 8 3 6 30 2 150 −55 to +150 °C °C Unit V V V A A W 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Marking Symbol: C5809 Internal Connection C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf Conditions IC = 10 mA, IB = 0 VCB = 800 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 3 A IC = 3 A...