2SC5829

Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching ■ Features Allowing the small current and low voltage operation High transition frequency fT Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) 0.60±0.05 3 2 Unit: mm 1 1.00±0.05 0.39+0.01 −0.03 0.25±0.05 0.25±0.05 1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 10 7 2 10 50 150 −55 to +150 Unit V V V mA mW °C °C 0.50±0.05 ■ Absolute Maximum Ratings Ta = 25°C 3 0.65±0.01 2 0.05±0.03 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: X ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) www.DataSheet4U.com Forward current transfer ratio Transition frequency Collector output capacitance (Common base, input open circuited) Forward transfer gain Maximum unilateral power gain Noise figure Symbol ICBO IEBO hFE fT Cob S21e2 GUM NF Conditions VCB = 10 V, IE = 0 VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz 100 4 0.4 6 15 3.5 Min Typ ...