2SC5848

Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Unit: mm  Features 3 2 0.60±0.05  High forward current transfer ratio hFE  Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package 1 1.00±0.05 0.39+−00..0013 0.15±0.05 0.05±0.03 0.35±0.01 Package: 0.6 mm × 1.0 mm (hight 0.39 mm) /  Absolute Maximum Ratings Ta = 25°C 0.50±0.05 0.25±0.05 0.25±0.05 1 Parameter e ) Collector-base voltage (Emitter open) c type Collector-emitter voltage (Base open) n d tage. ued Emitter-base voltage (Collector open) le s ontin Collector current a elifecyc disc Peak collector current n u t ed, Collector power dissipation roduc d typ Junction temperature te tin ur P tinue Storagetemperature Symbol Rating Unit VCBO 60 V VCEO 50 V VEBO 7 V IC 100 mA ICP 200 mA PC 100 mW Tj 125 °C Tstg –55 to +125 °C 3 2 0.65±0.01 0.05±0.03 1: Base 2: Emitter 3: Collector Marking Symbol : 3E ML3-N2 Package in n followingefdodiscon  Electrical Characteristics Ta = 25°C±3°C es plan Parameter Symbol Conditions Min Typ Max Unit a o includ type, Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V c ued nce Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V M is ntin tena Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V isco ain Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA e/D e,...