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2SC5851 Datasheet

Part Number 2SC5851
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon NPN Epitaxial Type Transistor
Datasheet 2SC5851 Datasheet2SC5851 Datasheet (PDF)

www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semico.

  2SC5851   2SC5851






Part Number 2SC5859
Manufacturers Toshiba
Logo Toshiba
Description SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Datasheet 2SC5851 Datasheet2SC5859 Datasheet (PDF)

2SC5859 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5859 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV High Voltage Low Saturation Voltage High Speed : VCBO = 1700 V : VCE (sat) = 3 V (max) : tf(2) = 0.1 µs (Typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO .

  2SC5851   2SC5851







Part Number 2SC5858
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Datasheet 2SC5851 Datasheet2SC5858 Datasheet (PDF)

www.DataSheet4U.com 2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV z High Voltage z Low Saturation Voltage z High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (Max) : tf(2) = 0.1 μs (Typ.) Unit: mm ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage T.

  2SC5851   2SC5851







Part Number 2SC5857
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Datasheet 2SC5851 Datasheet2SC5857 Datasheet (PDF)

www.DataSheet4U.com 2SC5857 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5857 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV High Voltage Low Saturation Voltage High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (max) : tf(2) = 0.1 µs (typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Rang.

  2SC5851   2SC5851







Part Number 2SC5856
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Datasheet 2SC5851 Datasheet2SC5856 Datasheet (PDF)

www.DataSheet4U.com 2SC5856 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5856 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage z Low Saturation Voltage z High Speed : VCBO = 1500 V : VCE (sat) = 3 V (max) : tf(2) = 0.1 µs (typ.) Unit: mm ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collec.

  2SC5851   2SC5851







Part Number 2SC5855
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC5851 Datasheet2SC5855 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5855 DESCRIPTION ·High speed switching ·High voltage ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for super high resolution ·Display color TV digital TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emi.

  2SC5851   2SC5851







Silicon NPN Epitaxial Type Transistor

www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 www.DataSheet4U.com Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substit.


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