Transistors
2SC5950
Silicon NPN epitaxial planar type
For general amplification Complementary to 2SA2122
0.3+–00..01
...
Transistors
2SC5950
Silicon NPN epitaxial planar type
For general amplification Complementary to 2SA2122
0.3+–00..01
Unit: mm
0.15+–00..0150
(0.425)
Features
3
1.25±0.10 2.1±0.1 5°
High forward current transfer ratio hFE
Smini typ package, allowing downsizing of the equipment and automatic insertion through the tape packing
1
2
Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
(0.65) (0.65) 1.3±0.1 2.0±0.2
Collector-base
voltage (Emitter open)
e e) Collector-emitter
voltage (Base open) c . typ Emitter-base
voltage (Collector open) n d stage tinued Collector current
le on Peak collector current
a elifecyc , disc Collector power dissipation n u ct ped Junction temperature te tin Produ ed ty Storagetemperature
VCBO
60
V
VCEO
50
V
VEBO
7
V
IC
100
mA
ICP
200
mA
PC
150
mW
Tj
150
°C
Tstg −55 to +150 °C
0 to 0.1 0.9±0.1 0.9–+00..12
0.2±0.1
10°
1: Base 2: Emitter 3: Collector
Marking Symbol: 7M
SMini3-G1 Package
g four continu Electrical Characteristics Ta = 25°C±3°C
in n llowin d dis Parameter
Symbol
Conditions
Min Typ Max
s fo lane Collector-base
voltage (Emitter open)
VCBO IC = 10 µA, IE = 0
60
a o lude e, p Collector-emitter
voltage (Base open)
VCEO IC = 2 mA, IB = 0
50
inc typ Emitter-base
voltage (Collector open)
VEBO IE = 10 µA, IC = 0
7
c tinued ance Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1
M is con inten Collector-emitter cutoff current (Base open) ICEO VCE =...
