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2SC6026 Transistor Datasheet PDF

Silicon NPN Transistor

Silicon NPN Transistor

 

 

 

Part Number 2SC6026
Description Silicon NPN Transistor
Feature 2SC6026 TOSHIBA Transistor Silicon NPN E pitaxial Type (PCT Process) 2SC6026 Ge neral-Purpose Amplifier Applications



• www.
DataSheet4U.
com Unit: mm 0.
15±0.
05 High voltage and h igh current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.
1 mA)/hFE (IC = 2 mA) = 0.
95 (typ.
) 0.
6±0.
05 0.
35±0.
05 High hFE Lead (Pb) free : hFE = 120~400 Complementa ry to 2SA2154 1 3 2 0.
8±0.
05 1.
0±0.
0 5 0.
1±0.
05 Maximum Ratings (Ta = 25° C) Characteristic Collector-base voltag e Collector-emitter voltage Emitter-bas e voltage Collector current Base curren t Collector power dissipation J .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SC6026 Datasheet

2SC6026

 

 

 


 

 

 

Part Number 2SC6026MFV
Description Silicon NPN Transistor
Feature 2SC6026MFV TOSHIBA Transistor Silicon NP N Epitaxial Type (PCT Process) 2SC6026 MFV General-Purpose Amplifier Applicati ons



• High voltage and hi gh current : VCEO = 50 V, IC = 150 mA ( max) Excellent hFE linearity : hFE (IC = 0.
1 mA)/hFE (IC = 2 mA) = 0.
95 (typ.
) 0.
8 ± 0.
05 1.
2 ± 0.
05 0.
22 ± 0.
05 1 .
2 ± 0.
05 Unit: mm Complementary to 2SA2154MFV
• Lead (Pb) - free www.
Da taSheet4U.
com 0.
4 0.
4 High hFE : hF E = 120~400 1 1 3 2 0.
13 ± 0.
05 Max imum Ratings (Ta = 25°C) 0.
5 ± 0.
05 Characteristic Collector-base voltage C ollector-emitter voltage Emitter-base v oltage Collector current Base c .
Manufacture Toshiba Semiconductor
Datasheet
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2SC6026MFV

 

 

 


 

 

 

Part Number 2SC6026CT
Description Silicon NPN Transistor
Feature 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026C T General Purpose Amplifier Application s



• High voltage and high current : VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.
1 mA)/hFE (IC = 2 mA)= 0.
95 (typ.
) High hFE : hFE = 120 to 400 Complementary t o 2SA2154CT 1.
0±0.
05 0.
25±0.
03 3 0.
65±0.
02 0.
05±0.
03 0.
6±0.
05 0.
5±0.
03 Unit: mm 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Co llector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power di ssipation Junction temperature Stor .
Manufacture Toshiba
Datasheet
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2SC6026CT

 

 

 

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