2SC6036

Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+−00..0052 0.10+−00..0052  Features 3 0.15 min. 0.80±0.05 1.20±0.05  Low collector-emitter saturation voltage VCE(sat) 5° 0.15 min.  SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing  Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit 0.23+−00..0052 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5° Collector-base voltage (Emitter open) e e) Collector-emitter voltage (Base open) c . typ Emitter-base voltage (Collector open) n d stage tinued Collector current le on Peak collector current a elifecyc disc Collector power dissipation n u ct ped, Junction temperature rodu d ty Storage temperature VCBO 15 V VCEO 12 V VEBO 5 V IC 500 mA ICP 1 A PC 100 mW Tj 125 °C Tstg –55 to +125 °C 0 to 0.01 0.52±0.03 0.15 max. 1: Base 2: Emitter 3: Collecter SSSMini3-F1 Package Marking Symbol : 4U te tinwing foudrisPcontinue  Electrical Characteristics Ta = 25°C±3°C in n follo ned Parameter Symbol Conditions Min Typ Max Unit des , pla Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 V a o inclu type Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 12 V c ued nce Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V M is ntin tena Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 µA isc...