2SC6076

isc Silicon NPN Power Transistor 2SC6076 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)=0.5V(Max) @IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Amplifier Applications ·Power Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.0 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.16 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB=50mA VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=100mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB=100mA ICBO Collector Cutoff Current VCB=160V ; IE= 0 IEBO Emitter Cutoff Current VEB= 9V ; IC= 0 IC= 1mA ; VCE= 2V ...