2SC6084

www.DataSheet4U.com Ordering number : ENA0630 2SC6084 SANYO Semiconductors DATA SHEET 2SC6084 Features NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 1500 800 5 5 12 1.75 50 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Fall Time Symbol ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE1 hFE2 tf Conditions VCB=800V, IE=0A VCE=1500V, RBE=0Ω IC=100mA, IB=0A VEB=4V, IC=0A IC=2.7A, IB=0.54A IC=2.7A, IB=0.54A VCE=5V, IC=0.5A VCE=5V, IC=3A IC=1.8A, IB1=0.36A, IB2=--0.72A 10 5 7 0.2 µs 800 1.0 3 1.5 Ratings min typ max 10 1.0 Unit µA mA V mA V V Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or ot...