ST 2SC828 / 828A
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
These transistors ...
ST 2SC828 / 828A
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
These transistors are subdivided into three groups Q, R and S according to their DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25oC)
Collector Base
Voltage Collector Emitter
Voltage Emitter Base
Voltage Peak Collector Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VCBO VCEO VEBO ICM
IC Ptot Tj TS
Value ST 2SC828 ST 2SC828A
30 45 25 45
7 100 50 400 150 -55 to +150
G S P FORM A IS AVAILABLE
Unit
V V V mA mA mW OC OC
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®
ST 2SC828 / 828A
Characteristics at Tamb=25 OC
DC Current Gain at IC=2mA, VCE=5V
Current Gain Group
Q R S
Collector Base Breakdown
Voltage
at IC=10µA
ST 2SC828 ST 2SC828A
Collector Emitter Breakdown
Voltage
at IC=2mA
ST 2SC828 ST 2SC828A
Emitter Base Breakdown
Voltage
at IE=10µA
Collector Saturation
Voltage at IC=50mA, IB=5mA
Base Emitter
Voltage at IC=10mA, VCE=5V
Gain Bandwidth Product at IC=-2mA, VCE=10V
Noise Figure at VCE=5V,IE=0.2mA, RG=2kΩ,f=1kHz
Symbol
hFE hFE hFE V(BR)CBO V(BR)CBO
V(BR)CEO V(BR)CEO
V(BR)EBO
VCE(sat)
VBE
fT
NF
Min.
130 180 260 30 45
25 45
7
-
-
-
-
G S P FORM A IS AVAILABLE
Typ.
-
-
-
0.14
-
220
6
Max.
280 360 520
-
-
-
-
0.8
-
-
Un...