2SC945

DATA SHEET NPN SILICON TRANSISTOR 2SC945 NPN SILICON TRANSISTOR DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching. FEATURES High voltage LVCEO = 50 V MIN. Excellent hFE linearity hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipation (TA = 25°C) Total Power Dissipation −55 to +150°C +150°C Maximum 250 mW Maximum Voltages and Currents (TA = 25°C) VCBO Collector to Base Voltage VCEO Collector to Emitter Voltage VEBO Emitter to Base Voltage IC Collector Current IB Base Current 60 V 50 V 5.0 V 100 mA 20 mA PACKAGE DRAWING (Unit: mm) φ 5.2 MAX. 5.5 MAX. 12.7 MIN. 0.5 1.27 2.54 1.77 MAX. 4.2 MAX. 123 1. Emitter 2. Collector 3. Base EIAJ: JEDEC: IEC: SC43B TO92 PA33 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC DC Current Gain DC Current Gain Gain Bandwidth Product Collector to Base Capacitance Collector Cutoff Current Emitter Cutoff Current Base to Emitter Voltage Collector Saturation Voltage Base Saturation Voltage SYMBOL hFE1 hFE2 fT Cob ICBO IEBO VBE VCE(sat) VBE(sat) TEST CONDITIONS VCE = 6.0 V, IC = 0.1 mA VCE = 6.0 V, IC = 1.0 mA VCE = 6.0 V, IE = −10 mA VCB = 6.0 V, IE = 0, f = 1.0 MHz VCB = 60 V, IE = 0 A VEB = 5.0 V, IC = 0 A VCE = 6.0 V, IC = 1.0 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA MIN. 50 90 0.55 TYP. 185 200 250 3.0 0.62 0.15 0.86 MAX. 600 100 100 0.65 0.3 1.0 UNIT MHz pF ...