2SCR514P FRA
Middle Power Transistor (80V / 0.7A)
Parameter
VCEO IC
Value
80V 0.7A
lFeatures
1)Low saturation voltage...
2SCR514P FRA
Middle Power Transistor (80V / 0.7A)
Parameter
VCEO IC
Value
80V 0.7A
lFeatures
1)Low saturation
voltage, typically VCE(sat)=300mV (Max.) (IC/IB=300mA/15mA) 2)High speed switching
lOutline
SOT-89 SC-62
MPT3
lInner circuit
Datasheet AEC-Q101 Qualified
lApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING
lPackaging specifications
Part No.
Package
2SCR514P FRA
SOT-89 (MPT3)
Package size
Taping code
Reel size (mm)
Tape width (mm)
Basic ordering unit.(pcs)
Marking
4540 T100 180
12 1000 ND
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20160920 - Rev.001
2SCR514P FRA
Datasheet
lAbsolute maximum ratings (Ta = 25°C) Parameter
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage
Collector current
Power dissipation
Junction temperature Range of storage temperature
Symbol
VCBO VCEO VEBO
IC ICP*1 PD*2 PD*3 Tj Tstg
Values 80 80 6 0.7 1.4 0.5 2.0 150
-55 to +150
Unit V V V A A W W
℃ ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cut-off current Emitter cut-off current
Collector-emitter saturation
voltage
DC current gain
Transition frequency
Output capacitance
Symbol
Conditions
BVCBO IC = 100μA
BVCEO IC = 1mA
BVEBO IE = 100μA
ICBO VCB = 80V
IEBO VEB = 4V
VCE(s...