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2SD1163 Datasheet

Part Number 2SD1163
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SD1163 Datasheet2SD1163 Datasheet (PDF)

2SD1163, 2SD1163A Silicon NPN Triple Diffused Application TV horizontal deflection output Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SD1163, 2SD1163A Absolute Maximum Ratings (Ta = 25°C) Rating Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (p.

  2SD1163   2SD1163






Part Number 2SD1163
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1163 Datasheet2SD1163 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A ·Wit www.datasheet4u.com DESCRIPTION h TO-220 package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output, PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-ba.

  2SD1163   2SD1163







Part Number 2SD1163
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description NPN Silicon Epitaxial Power Transistor
Datasheet 2SD1163 Datasheet2SD1163 Datasheet (PDF)

2SD1163/2SD1163A ® Pb Free Plating Product 2SD1163/2SD1163A Pb NPN Silicon Epitaxial Power Transistor FEATURES: * Medium Power Linear Switching Applications * Low collector saturation voltage TV horizontal deflection output 15.70±0.20 2.80±0.20 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 13.08±0.20 COLLECTOR 2 BASE 1 9.19±0.20 6.50±0.20 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 0.80±0.20 2.54typ 2.54typ 0.50±0.20 Dimensions in Millimeters TO-220C Package Dimension Abso.

  2SD1163   2SD1163







Part Number 2SD1163
Manufacturers Renesas
Logo Renesas
Description Silicon NPN Transistor
Datasheet 2SD1163 Datasheet2SD1163 Datasheet (PDF)

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other H.

  2SD1163   2SD1163







Part Number 2SD1163
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1163 Datasheet2SD1163 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A .

  2SD1163   2SD1163







NPN TRANSISTOR

2SD1163, 2SD1163A Silicon NPN Triple Diffused Application TV horizontal deflection output Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SD1163, 2SD1163A Absolute Maximum Ratings (Ta = 25°C) Rating Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) I C (surge) PC * Tj Tstg 1 2SD1163 300 120 6 7 10 20 40 150 –55 to +150 2SD1163A 350 150 6 7 10 20 40 150 –55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) 2SD1163 Item Collector cutoff current Symbol I CBO Min — — Collector to emitter breakdown voltage Emitter to base breakdown voltage V(BR)CEO V(BR)EBO 120 6 25 — — — Typ — — — — — — — — Max 5 — — — — 2.0 1.2 0.5 2SD1163A Min — — 150 6 25 — — — Typ — — — — — — — — Max — 5 — — — 1.0 1.2 0.5 V V µs Unit mA mA V V Test conditions VCB = 300 V, IE = 0 VCB = 350 V, IE = 0 I C = 10 mA, RBE = ∞ I E = 10 mA, IC = 0 VCE = 5 V, IC = 5 A*1 I C = 5 A, IB = 0.5 A*1 I C = 5 A, IB = 0.5 A*1 I CP = 3.5 A, I B1 = 0.45 A DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test. VCE (sat) VBE (sat) tf 2 2SD1163, 2SD1163A Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 50 30 Collector current IC (A) 10 3 1.0 0.3 2SD.


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