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2SD1245 Datasheet

Part Number 2SD1245
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2SD1245 Datasheet2SD1245 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous.

  2SD1245   2SD1245






Part Number 2SD1249A
Manufacturers Kexin
Logo Kexin
Description Silicon NPN Transistor
Datasheet 2SD1245 Datasheet2SD1249A Datasheet (PDF)

SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1249, 2SD1249A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.2 9.70 -0.2 +0.15 0.50 -0.15 +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 High collector-base voltage (Emitter open) VCBO 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage (Emitter open) Colle.

  2SD1245   2SD1245







Part Number 2SD1249A
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1245 Datasheet2SD1249A Datasheet (PDF)

Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type For low-freauency power amplification 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q 10.5min. High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 350 400 250 300 5 1.5 0.75 35 1.3 150 –55 to +150 Unit V 1.5max. 2.0 1.1max. 0.8±0.1 0.5max. s Absolute Maxim.

  2SD1245   2SD1245







Part Number 2SD1249
Manufacturers Kexin
Logo Kexin
Description Silicon NPN Transistor
Datasheet 2SD1245 Datasheet2SD1249 Datasheet (PDF)

SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1249, 2SD1249A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.2 9.70 -0.2 +0.15 0.50 -0.15 +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 High collector-base voltage (Emitter open) VCBO 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage (Emitter open) Colle.

  2SD1245   2SD1245







Part Number 2SD1249
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1245 Datasheet2SD1249 Datasheet (PDF)

Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type For low-freauency power amplification 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q 10.5min. High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 350 400 250 300 5 1.5 0.75 35 1.3 150 –55 to +150 Unit V 1.5max. 2.0 1.1max. 0.8±0.1 0.5max. s Absolute Maxim.

  2SD1245   2SD1245







Part Number 2SD1248
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Power Transistor
Datasheet 2SD1245 Datasheet2SD1248 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor 2SD1248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage .

  2SD1245   2SD1245







Silicon NPN Power Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 500 V 400 V 5 V 6 A 10 A 40 W 150 ℃ -55~150 ℃ 2SD1245 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 V(BR)EBO Emitter -Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 60mA ICBO Collector Cutoff Current VCB= 400V; IE= 0 ICEO Collector Cutoff Current VCE= 400V; IB= 0 hFE DC Current Gain IC= 2A; VCE= 2V 2SD1245 MIN TYP. MAX UNIT 400 V 5 V 1.5 V 2.5 V 100 μA 1 mA 500 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T.


2016-11-17 : 2SD1113    3CA753    3DA752    2SC4461    2SC4574    2SD1899-Z    2SD2102    2SD2118    2SD2161    2SD2422   


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