Power Transistors
2SD1255
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB932
8.5±0.2 6.0±0.5...
Power Transistors
2SD1255
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB932
8.5±0.2 6.0±0.5
Unit: mm
3.4±0.3 1.0±0.1
10.0±0.3 1.5±0.1
s Features
q Low collector to emitter saturation
voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base
voltage
Collector to emitter
voltage
Emitter to base
voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO VCEO VEBO ICP IC
PC
Tj Tstg
130 80 7 8 4 35 1.3 150 –55 to +150
Unit V V V A A
W
˚C ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current Emitter cutoff current Collector to emitter
voltage
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