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2SD1266A Datasheet

Part Number 2SD1266A
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1266A Datasheet2SD1266A Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2SD1266 Collec.

  2SD1266A   2SD1266A






Part Number 2SD1266A
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1266A Datasheet2SD1266A Datasheet (PDF)

isc Silicon NPN Power Transistor 2SD1266A DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage .

  2SD1266A   2SD1266A







Part Number 2SD1266A
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP Transistor
Datasheet 2SD1266A Datasheet2SD1266A Datasheet (PDF)

Power Transistors 2SB941, 2SB941A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SB941 –60 VCBO V base voltage 2SB941A –80 .

  2SD1266A   2SD1266A







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2SD1266 Collector-base voltage 2SD1266A 2SD1266 VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage 2SD1266A Emitter-base voltage Collector current Collector current-peak Ta=25 Collector power dissipation TC=25 Junction temperature Storage temperature 35 150 -55~150 Open collector Open base 80 6 3 5 2 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter voltage 2SD1266 IC=30mA ,IB=0 2SD1266A IC=3A, IB=0.375A IC=3A ; VCE=4V VEB=6V; IC=0 2SD1266 2SD1266A 2SD1266 2SD1266A VCE=30V; IB=0 CONDITIONS www.datasheet4u.com 2SD1266 2SD1266A SYMBOL MIN 60 TYP. MAX UNIT VCEO V 80 1.2 1.8 1 V V mA VCEsat VBE IEBO Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current ICEO 0.3 VCE=60V; IB=0 VCE=60V; VBE=0 0.2 VCE=80V; VBE=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=0.5A; VCE=10V,f=10MHz 70 10 30 250 m.


2009-05-04 : ADUC816    MD1803DFP    EU1Z    EU1    EU1A    EU1C    C3170    2SD1265    2SD1265A    2SD1266   


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