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2SD1266A TRANSISTOR Datasheet PDFSILICON POWER TRANSISTOR SILICON POWER TRANSISTOR |
　
　
　
| Part Number | 2SD1266A |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Feature | SavantIC Semiconductor
Product Specific ation
Silicon NPN Power Transistors
2 SD1266 2SD1266A
www. datasheet4u. com D ESCRIPTION ·With TO-220Fa package ·Hi gh forward current transfer ratio hFE w hich has satisfactory linearity ·Low c ollector saturation voltage ·Complemen t to type 2SB941/941A APPLICATIONS ·Fo r power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig. 1 simplifie d outline (TO-220Fa) and symbol DESCRIP TION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2SD1266 Collector -base voltage 2SD1266A 2SD1266 VCEO VEB O IC ICM PC Tj Tstg Collector-emitter v oltage 2SD1266A Emi . |
| Manufacture | SavantIC |
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| Part Number | 2SD1266A |
|---|---|
| Description | Silicon PNP Transistor |
| Feature | Power Transistors
2SB941, 2SB941A
Silic on PNP epitaxial planar type
For low-fr equency power amplification Complementa ry to 2SD1266 and 2SD1266A
Unit: mm
0. 7 ±0. 1 10. 0±0. 2 5. 5±0. 2 2. 7±0. 2 4. 2± 0. 2 φ3. 1±0. 1 1. 4±0. 1 1. 3±0. 2 0. 8±0 . 1 0. 5 +0. 2 –0. 1 2. 54±0. 25 5. 08±0. 5 1 2 3 4. 2±0. 2 s Features q q q 7. 5± 0. 2 Solder Dip 4. 0 14. 0±0. 5 s Absolut e Maximum Ratings Parameter Collector t o base voltage Collector to 2SB941 2SB9 41A 2SB941 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25ËšC) Ratings –60 â €“80 –60 –80 –5 –5 –3 35 2 15 0 –55 to +150 Unit V emitter voltage 2SB941A Emitter to base voltage Peak c ollector . |
| Manufacture | Panasonic Semiconductor |
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| Part Number | 2SD1266A |
|---|---|
| Description | NPN Transistor |
| Feature | isc Silicon NPN Power Transistor
2SD126 6A
DESCRIPTION ·Low Collector Saturat ion Voltage
: VCE(sat)= 1. 2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltag e- : V(BR)CEO= 80V (Min) ·Good Lineari ty of hFE ·Complement to Type 2SB941A ·Minimum Lot-to-Lot variations for rob ust device performance and reliable ope ration APPLICATIONS ·Designed for powe r amplification. ABSOLUTE MAXIMUM RATI NGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 8 0 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Curr . |
| Manufacture | INCHANGE |
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