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2SD1267 Datasheet

Part Number 2SD1267
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1267 Datasheet2SD1267 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1267 2SD1267A www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2SD1267 Collector-base voltage 2SD1267A 2SD1267 VCEO VEBO IC .

  2SD1267   2SD1267






Part Number 2SD1267
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP Transistor
Datasheet 2SD1267 Datasheet2SD1267 Datasheet (PDF)

Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q 7.5±0.2 Solder Dip 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1267 2SD1267A 2SD1267 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings 60 80 60 80 5 8 4 40 .

  2SD1267   2SD1267







Part Number 2SD1267
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1267 Datasheet2SD1267 Datasheet (PDF)

isc Silicon NPN Power Transistor 2SD1267 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB942 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60.

  2SD1267   2SD1267







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1267 2SD1267A www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2SD1267 Collector-base voltage 2SD1267A 2SD1267 VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage 2SD1267A Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature Ta=25 TC=25 Open collector Open base 80 5 4 8 2 W 40 150 -55~150 V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD1267 IC=30mA ,IB=0 2SD1267A IC=4A, IB=0.4A IC=3A ; VCE=4V VEB=5V; IC=0 2SD1267 2SD1267A 2SD1267 2SD1267A VCE=30V; IB=0 CONDITIONS www.datasheet4u.com 2SD1267 2SD1267A SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 1.5 2.0 1.0 V V mA VCEsat VBE IEBO Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current ICEO 0.7 VCE=60V; IB=0 VCE=60V; VBE=0 0.4 VCE=80V; VBE=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=0.5A; VCE=5V,f=1MHz 70 15 20 250 mA ICES Collector cut-off current.


2009-05-04 : ADUC816    MD1803DFP    EU1Z    EU1    EU1A    EU1C    C3170    2SD1265    2SD1265A    2SD1266   


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