Power Transistors
2SD1271, 2SD1271A
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB946 and 2...
Power Transistors
2SD1271, 2SD1271A
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB946 and 2SB946A
Unit: mm
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
s Features
q q q q
Low collector to emitter saturation
voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD1271 2SD1271A 2SD1271 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
16.7±0.3 14.0±0.5
Ratings 130 150 80 100 7 15 7 40 2 150 –55 to +150
Unit V
emitter
voltage 2SD1271A Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
Solder Dip
4.0
7.5±0.2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage 2SD1271 2SD1271A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 5A, IB = 0.25A IC = 5A, IB = 0.25A VCE = 10V, IC = 0.5A, f = 10MHz IC = 3A, IB1 = 0.3A, IB2 = – 0.3A, VCC = 50V 30 0.5 1.5 0.1 80 100 45 90 260 0.5 1.5 V V MHz µs µs µs min typ max 1...