isc Silicon NPN Power Transistor
2SD1351
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Colle...
isc Silicon NPN Power Transistor
2SD1351
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 60V(Min) ·Collector Power Dissipation-
: PC= 30W@ TC= 25℃ ·Low Collector Saturation
Voltage-
: VCE(sat)= 1.0V(Max)@ (IC= 2A, IB= 0.2A) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
60
V
VCEO
Collector-Emitter
Voltage
60
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
0.5
A
2 W
30
150
℃
Tstg
Storage Temperature
-55~150
℃
isc website:www.iscsemi.com
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isc Silicon NPN Power Transistor
2SD1351
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 30mA; IB= 0
60
V
VCE(sat) Collector-Emitter Saturation
Voltage IC= 2A; IB= 0.2A
1.0
V
VBE(on) Base-Emitter On
Voltage
IC= 0.5A; VCE= 5V
1.0
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
100 μA
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
60
300
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
35
pF
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
3
...