isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Minimu...
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current- Continuous
2.5
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
10
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1400
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown
Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 30mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 2A; IB= 0.6A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 2A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
tf
Fall Time
IC= 2A, IB1= 0.6A, IB2= 1.2A; RL= 100Ω; VCC= 200V
2SD1400
MIN TYP. MAX UNIT
1500
V
800
V
7
V
8.0
V
1.5
V
10 μA
1.0...