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2SD1417 Datasheet

Part Number 2SD1417
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1417 Datasheet2SD1417 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor 2SD1417 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation Voltage ·Complement to Type 2SB1022 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .

  2SD1417   2SD1417






Part Number 2SD1419
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1417 Datasheet2SD1419 Datasheet (PDF)

2SD1419 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1026 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 120 100 5 1.

  2SD1417   2SD1417







Part Number 2SD1418
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1417 Datasheet2SD1418 Datasheet (PDF)

2SD1418 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1025 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1418 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 120 80 5 1 .

  2SD1417   2SD1417







Part Number 2SD1416
Manufacturers INCHANGE
Logo INCHANGE
Description Silicon NPN Darlington Power Transistor
Datasheet 2SD1417 Datasheet2SD1416 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB1021 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Hammer driver,pulse motor drive applications. ·High power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET.

  2SD1417   2SD1417







Part Number 2SD1415A
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1417 Datasheet2SD1415A Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor 2SD1415A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ·Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V.

  2SD1417   2SD1417







NPN Transistor

isc Silicon NPN Darlington Power Transistor 2SD1417 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation Voltage ·Complement to Type 2SB1022 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.2 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA ICBO Collector Cutoff Current VCB= 60V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 3A ; VCE= 3V hFE -2 DC Current Gain IC= 7A ; VCE= 3V Switching Time.


2020-09-21 : 2SD1729    2SC4075    2SC4105    2SD687    2SD675    2SD673    2SD613    2SD608    2SD612    2SD600K   


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