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2SD1485 Transistor Datasheet PDF

Silicon NPN Power Transistor

Silicon NPN Power Transistor

 

 

 

Part Number 2SD1485
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor 2SD148 5 DESCRIPTION ·Low Collector Saturati on Voltage- : VCE(sat)= 2.
0V(Max)@IC= 3 A ·Wide Area of Safe Operation ·Compl ement to Type 2SB1054 ·Minimum Lot-to- Lot variations for robust device perfor mance and reliable operation APPLICATIO NS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE U NIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 10 0 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collecto r Power Dissipation @ .
Manufacture Inchange Semiconductor
Datasheet
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2SD1485

 

 

 


 

 

 

Part Number 2SD1485
Description Silicon NPN Transistor
Feature Power Transistors 2SD1485 Silicon NPN t riple diffusion planar type For high po wer amplification Complementary to 2SB1 054 Unit: mm q q q q 16.
2±0.
5 12.
5 3.
5 Solder Dip Extremely satisfactory linearity of the forward current transf er ratio hFE Wide area of safe operatio n (ASO) High transition frequency fT Fu ll-pack package which can be installed to the heat sink with one screw (TC=25 C) Ratings 100 100 5 8 5 60 3 150 –5 5 to +155 Unit V V V A A W ˚C ˚C 0.
7 s Features 15.
0±0.
3 11.
0±0.
2 5.
0 0.
2 3.
2 21.
0±0.
5 15.
0±0.
2 φ3.
2±0 .
1 2.
0±0.
2 2.
0±0.
1 0.
6±0.
2 1.
1±0 .
1 5.
45±0.
3 10.
9±0.
5 1 2 3 s A .
Manufacture Panasonic Semiconductor
Datasheet
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2SD1485

 

 

 

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