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2SD1563A Datasheet

Part Number 2SD1563A
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1563A Datasheet2SD1563A Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package www.datasheet4u.com ·Complement to type 2SB1086A ·Wide area of safe operation ·High breakdown voltage :BVCEO=160V(min) APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SD1563A Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltag.

  2SD1563A   2SD1563A






Part Number 2SD1563A
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1563A Datasheet2SD1563A Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1086A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V .

  2SD1563A   2SD1563A







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package www.datasheet4u.com ·Complement to type 2SB1086A ·Wide area of safe operation ·High breakdown voltage :BVCEO=160V(min) APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SD1563A Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 160 160 5 1.5 3.0 10 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.datasheet4u.com 2SD1563A SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)EBO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT COB Collector-emitter breakdown voltage IC=1mA ;IB=0 IE=50µA ;IC=0 IC=50µA ;IE=0 IC=1.0A ;IB=0.1A IC=1.0A ;IB=0.1A VCB=120V; IE=0 VEB=4V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz 160 V Emitter-base breakdown voltage 5 V Collector-base breakdown voltage 160 V Collector-emitter saturation voltage 2.0 V Base-emitter saturation voltage 1.5 V Collector cut-off current 1.0 µA Emitter cut-off current 1.0 µA DC current gain 56 2.


2009-05-05 : SEL4929    2SC5665    2SC5666    NLN    AM5888S    CAL4-40100    SOGC-01    SOGC-03    SOGC-51    SOGC-45   


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