INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1592
DESCRIPTION ·High Collector-Emitter Breakd...
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1592
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 300V(Min) ·High DC Current Gain
: hFE= 400(Min) @ IC= 2A, VCE= 2V ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High
voltage and low-speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
500
V
VCEO
Collector-Emitter
Voltage
300
V
VEBO
Emitter-Base
Voltage
10
V
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
5
A
10
A
0.5
A
1.5 W
30
150
℃
-55~150
℃
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1592
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 2A; IB= 5mA
VBE(sat) Base-Emitter Saturation
Voltage
IC= 2A; IB= 5mA
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
hFE -1
DC Current Gain
IC= 2A ; VCE= 2V
hFE -2
DC Current Gain
IC= 3A ; VCE= 2V
Switching times
ton
Turn-on Time
tstg
St...