2SD1620

Ordering number:EN1719B NPN Epitaxial Planar Silicon Transistor 2SD1620 1.5V, 3V Strobe Applications Features · Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. · Large current capacity and highly resistant to breakdown. · Excellent linearity of hFE in the region from low current to high current. · Ultrasmall size supports high-density, ultrasmallsized hybrid IC designs. Package Dimensions unit:mm 2038A [2SD1620] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEX VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on ceramic board (250mm2× 0.8mm) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT Cob VCE(sat) VCB=20V, IE=0 VEB=4V, IC=0 VCE=2V, IC=3A VCE=10V, IC=50mA VCB=10V, f=1MHz IC=3A, IB=60mA 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Ratings 30 20 10 6 3 5 500 1.3 150 –55 to +150 Unit V V V V A A mW W ˚C ˚C Ratings min typ max Unit 100 nA 100 nA 140 210 200 MHz 30 pF 0.3 0.4 V Continued on next page. Any and all SANYO products described or cont...