Silicon Transistor. 2SD1685 Datasheet

2SD1685 Datasheet PDF


Part Number

2SD1685

Description

NPN Epitaxial Planar Silicon Transistor

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download 2SD1685 Datasheet



2SD1685
Ordering number:EN2042A
NPN Epitaxial Planar Silicon Transistor
2SD1685
20V/5A Switching Applications
Applications
· Strobe, voltage regulators, relay drivers, lamp
drivers.
Features
· Low saturation voltage.
· Large current capacity.
· Fast switching time.
· No insulator required when mounting because the
leadframe of the chip is covered with plastic.
Package Dimensions
unit:mm
2042B
8.0
4.0
1.0 1.0
[2SD1685]
3.3
3.0
1.6
0.8
0.8
0.75
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
2.4
4.8
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE1
hFE2
Gain-Bandwidth Product
fT
Output Capacitance
Cob
* The 2SD1685 is classified by 500mA hFE as follows :
120 E 200 160 F 320 280 G 560
VCB=50V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=3A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
0.7
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
60
20
6
5
8
1.5
10
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
100 nA
100 nA
120*
560*
95
120 MHz
45 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/4277TA, TS No.2042–1/4

2SD1685
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SD1685
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=3A, IB=60mA
IC=3A, IB=60mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
220
60
20
6
30
300
40
max
500
1.5
Unit
mV
V
V
V
V
ns
ns
ns
No.2042–2/4




@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)