SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1729
www.datasheet4u.com
DESCRIPTION ...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1729
www.datasheet4u.com
DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High
voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current (DC) Collector current (Pulse) Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7 3.5 10 1.5 60 150 -55~150 UNIT V V V A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown
voltage Collector-emitter saturation
voltage Base-emitter saturation
voltage CONDITIONS IE=500mA; IC=0 IC=3A; IB=0.8A IC=3A; IB=0.8A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE fT VF DC current gain Transition frequency Diode forward
voltage IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IF=-3.5A,IB=0 5 2 MIN 7
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2SD1729
SYMBOL V(BR)EBO VCEsat VBEsat
TYP.
MAX
UNIT V
8.0 1.5 10 1 25
V V µA mA
MHz 2.0 V
Switching times ts tf Storage time IC=3A; IB1=0.8A IB2=-1.6A VCC=200V Fall time 0.2 µs 1...