SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1761
www.datasheet4u.com
DESCRIPTION ...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1761
www.datasheet4u.com
DESCRIPTION ·With TO-220Fa package ·Low collector saturation
voltage ·Complement to type 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current (DC) Collector current-Peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 80 60 5 3 6 30 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown
voltage Collector-base breakdown
voltage Emitter-base breakdown
voltage Collector-emitter saturation
voltage Base-emitter saturation
voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50µA , IE=0 IE=50µA , IC=0 IC=2A IB=0.2A IC=2A IB=0.2A VCB=60V IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V IE=0 ; VCB=10V ,f=1MHz 60 MIN 60 80 5
www.datasheet4u.com
2SD1761
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob
TYP.
MAX
UNIT V V V
1.0 1.5 10...