2SD1772A

Power Transistors 2SD1772, 2SD1772A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1192 and 2SB1192A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q q Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 200 200 150 180 6 2 1 25 2 150 –55 to +150 Unit V 16.7±0.3 14.0±0.5 Parameter Collector to base voltage Collector to 2SD1772 2SD1772A 2SD1772 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg emitter voltage 2SD1772A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip s Absolute Maximum Ratings 4.0 7.5±0.2 s Features 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1772 2SD1772A (TC=25˚C) Symbol ICBO IEBO VCEO VEBO hFE1* hFE2 VBE VCE(sat) fT Cob Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 5mA, IB = 0 IE = 0.5mA, IC = 0 VCE = 10V, IC = 100mA VCE = 10V, IC = 300mA VCE = 10V, IC = 300mA IC = 500mA, IB = 50mA VCE = 10V, IC = 100mA, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 27 150 180 6 60 50 1 1 V V MHz pF 240 min typ max 50 50 Unit µA µA V V Emitter to base voltage Forward current transfer ra...