2SD1817

isc NPN Epitaxial Planar Silicon Transistor 2SD1817 DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 80 V 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc NPN Epitaxial Planar Silicon Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 4mA V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE1 DC Current Gain IC= 1A; VCE= 2V hFE2 DC Current Gain IC= 2A; VCE= 2V 2SD1817 MIN TYP. MAX UNI...