isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: VCBO= 1300V (Min.) ·High Switching Sp...
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown
Voltage-
: VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base
Voltage
1300
V
VCES
Collector-Emitter
Voltage
1300
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2
A
3 W
100
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1847
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 4A; IB= 1A
VBE(sat) Base-Emitter Saturation
Voltage
ICBO
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 4A; IB= 1A
VCB= 750V; IE= 0 VCB= 1300V; IE= 0
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
VECF
C-E Diode Forward
Voltage
IF= 5A
Switching times, Resistive Load
tstg
Storage Time
tf
Fall Time
IC= 4A; IB1= 1A; IB2= -2A; VCC= 200V
2S...
