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2SD1912 Datasheet

Part Number 2SD1912
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2SD1912 Datasheet2SD1912 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SD1912 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V V.

  2SD1912   2SD1912






Part Number 2SD1912
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Epitaxial Planar Silicon Transistor
Datasheet 2SD1912 Datasheet2SD1912 Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com .

  2SD1912   2SD1912







Silicon NPN Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SD1912 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 1.75 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 5V hFE-2 DC Current Gain IC= 3A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V, f= 1MHz fT Current.


2013-12-04 : LC4032ZC-35M56C    LC4032ZC-5M56C    LC4032ZC-75M56C    LC4032ZC-35T48C    LC4032ZC-5T48C    LC4032ZC-75T48C    LC4064ZC-37M132C    LC4064ZC-5M132C    LC4064ZC-75M132C    LC4064ZC-37T100C   


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