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2SD2061 TRANSISTOR Datasheet PDFSILICON POWER TRANSISTOR SILICON POWER TRANSISTOR |
| Part Number | 2SD2061 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Feature | SavantIC Semiconductor
Product Specific ation
Silicon NPN Power Transistors
2 SD2061
www. datasheet4u. com DESCRIPTIO N ·With TO-220Fa package ·Low collect or saturation voltage ·Excellent DC cu rrent gain characteristics ·Wide safe operating area APPLICATIONS ·For low f requency power amplifier applications P INNING PIN 1 2 3 DESCRIPTION Base Colle ctor Emitter Fig. 1 simplified outline ( TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collect or current-Peak TC= . |
| Manufacture | SavantIC |
| Datasheet |
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| Part Number | 2SD2061 |
|---|---|
| Description | Transistor |
| Feature | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO. , LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES z Low satura tion voltage z Excellent DC current gai n characteristice 2. COLLECTOR 3. EMIT TER MAXIMUM RATINGS (TA=25℃ unless o therwise noted) Symbol VCBO VCEO VEBO I C PC www. DataSheet4U. com Paramenter Co llector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dis sipation Junction Temperature Storage T emperature Range Value 80 60 5 3 2 150 -55-150 Units V V V A W ℃ ℃ Tj Tstg ELECTRICAL CHA . |
| Manufacture | Jiangsu Changjiang Electronics |
| Datasheet |
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| Part Number | 2SD2061 |
|---|---|
| Description | Power Transistor |
| Feature | Power Transistor(60V,3A )
FEATURES
z L ow saturation voltage, typically VCE(sa t)=0. 3V at IC/IB=2A/0. 2A Pb z Excell ent DC current gain characteristics. Le ad-free z Pc=30W. ( TC=25℃) Producti on specification 2SD2061 ITO-220AB MA XIMUM RATING operating temperature rang e applies unless otherwise specified S ymbol Parameter Value Unit VCBO Col lector-Base Voltage 80 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Curren t Collector Dissipation DC Pulse Ta=25 ℃ TC=25℃ Junction and Storage Temp erature 60 V 5V 3 A 6 2 W 30 -55 to +1 50 ℃ S047 Rev. A ww . |
| Manufacture | GME |
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