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2SD2061 TRANSISTOR Datasheet PDF

SILICON POWER TRANSISTOR

SILICON POWER TRANSISTOR

 

 

 

Part Number 2SD2061
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD2061 www.
datasheet4u.
com DESCRIPTIO N ·With TO-220Fa package ·Low collect or saturation voltage ·Excellent DC cu rrent gain characteristics ·Wide safe operating area APPLICATIONS ·For low f requency power amplifier applications P INNING PIN 1 2 3 DESCRIPTION Base Colle ctor Emitter Fig.
1 simplified outline ( TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collect or current-Peak TC= .
Manufacture SavantIC
Datasheet
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Part Number 2SD2061
Description Transistor
Feature JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO.
, LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1.
BASE FEATURES z Low satura tion voltage z Excellent DC current gai n characteristice 2.
COLLECTOR 3.
EMIT TER MAXIMUM RATINGS (TA=25℃ unless o therwise noted) Symbol VCBO VCEO VEBO I C PC www.
DataSheet4U.
com Paramenter Co llector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dis sipation Junction Temperature Storage T emperature Range Value 80 60 5 3 2 150 -55-150 Units V V V A W ℃ ℃ Tj Tstg ELECTRICAL CHA .
Manufacture Jiangsu Changjiang Electronics
Datasheet
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Part Number 2SD2061
Description Power Transistor
Feature Power Transistor(60V,3A ) FEATURES z L ow saturation voltage, typically VCE(sa t)=0.
3V at IC/IB=2A/0.
2A Pb z Excell ent DC current gain characteristics.
Le ad-free z Pc=30W.
( TC=25℃) Producti on specification 2SD2061 ITO-220AB MA XIMUM RATING operating temperature rang e applies unless otherwise specified S ymbol Parameter Value Unit VCBO Col lector-Base Voltage 80 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Curren t Collector Dissipation DC Pulse Ta=25 ℃ TC=25℃ Junction and Storage Temp erature 60 V 5V 3 A 6 2 W 30 -55 to +1 50 ℃ S047 Rev.
A ww .
Manufacture GME
Datasheet
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