www.DataSheet4U.com
2SD2111
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2...
www.DataSheet4U.com
2SD2111
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3
12 3
www.DataSheet4U.com
2SD2111
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC PC* Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Tj Tstg ID *
1 1
Rating 120 120 7 3 6 2 25 150 –55 to +150 3
Unit V V V A A W
°C °C A
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown
voltage Symbol V(BR)CBO Min 120 120 7 — — 1000 — — — — — Typ — — — — — — — — — — — Max — — — 10 10 20000 1.5 3.0 2.0 3.5 3.0 V V V Unit V V V µA Test conditions IC = 0.1 mA, IE = 0 IC = 25 mA, RBE = ∞ IE = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1.5 A* IC = 3 A, IB = 30 mA* IC = 3 A, IB = 30 mA* ID = 3 A*
1 1
Collector to emitter breakdown V(BR)CEO
voltage Emitter to base breakdown
voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage C to E diode forward
voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD
IC = 1.5 A, IB = 3 mA*
1
1
IC = 1.5 A, IB = 3 mA*
1
1
See switching characteristic curve of 2SD1605.
2
www.DataS...