2SD2253

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2253 www.datasheet4u.com DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed APPLICATIONS ·Color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1700 600 5 6 12 3 50 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Storage time Resistive load ICP=5A ;IB1=1A;IB2=-2A;RL=40A Fall time CONDITIONS IE=200mA , IC=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=5A 66 8 1 MIN 5 www.datasheet4u.com 2SD2253 SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB VF ts tf TYP. MAX UNIT V 5.0 1.5 10 200 28 3 250 2.0 6.0 0.4 V V µA mA ...