2SD2351

2SD2351 General Purpose Transistor (50V, 150mA) Parameter VCEO IC Value 50V 150mA lFeatures 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. 　 (Max. VCE(sat)=300mV at IC/ IB=50mA/5mA) lOutline 　 SOT-323 　 SC-70 UMT3 lInner circuit 　 　 　 　 　 Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package 2SD2351 SOT-323 (UMT3) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 2021 T106 180 8 3000 BJ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20151209 - Rev.002 2SD2351 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 　 　 　 　 　 　 　 　 Datasheet Symbol VCBO VCEO VEBO IC ICP*1 PD*2 Tj Tstg Values 60 50 12 150 200 200 150 -55 to +150 Unit V V V mA mA mW ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Collector-base breakdown voltage BVCBO IC = 10μA Collector-emitter breakdown voltage BVCEO IC = 1mA Emitter-base breakdown voltage BVEBO IE = 10μA Collector cut-off current ICBO VCB = 50V Emitter cut-off current IEBO VEB = 12V Collector-emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA DC current gain hFE VCE = 5V, IC = 1mA Transition f...